No nā mea kūʻai aku a me nā luna kūʻai kūʻai honua, ʻo ka hoʻomaopopo ʻana i nā nuances o ka pauka silicon carbide ʻaʻole ia he koi ʻenehana wale nō - he pono hoʻokūkū. Inā hoʻohana ʻia ma ke ʻano he deoxidizer i ka hana kila, kahi abrasive hana kiʻekiʻe, a i ʻole he mea koʻikoʻi i ka uila uila uila (EV), hāʻawi ʻo SiC i kahi hui kūʻokoʻa o ka paʻakikī, ka conductivity thermal, a me ke kūpaʻa kemika.
He aha ka Silicon Carbide (SiC)?
ʻO Silicon carbide kahi semiconductor pūhui i haku ʻia me ke silika a me ke kalapona. Ma ke ʻano, he mea ʻokoʻa loa ia, loaʻa wale i nā helu i loko o kekahi mau ʻano meteorites a me nā waihona corundum. No laila, ʻaneʻane hana ʻia nā carbide silicon i hoʻohana ʻia i ka ʻoihana.
ʻO ka ʻano Crystal
He kū hoʻokahi ʻo SiC no ka mea e hōʻike ana ia i ka polymorphism, ʻo ia hoʻi hiki ke noho ma mua o 250 mau ʻano crystalline. ʻO nā hale maʻamau ka:
ʻO Alpha Silicon Carbide (α-SiC): ʻO ka polymorph maʻamau, i hōʻike ʻia e kahi ʻano aniani hexagonal. Paʻa ia ma nā mahana ma luna o 1700°C.
Beta Silicon Carbide (β-SiC): Loaʻa kēia ʻano i kahi ʻano aniani cubic (e like me ke daimana) a ua hana ʻia ma nā mahana ma lalo o 1700°C.
ʻO ke kino a me ke kimika nui
No ke aha i ʻimi ʻia ai ka pauka SiC? ʻAʻole hoʻohālikelike ʻia kāna mau ana hana:
Paʻakiki Loa: Me ka paʻakikī Mohs o 9.0 a 9.5, ʻo ia ka lua o ka daimana a me ka boron carbide.
ʻO ke kiʻekiʻe Thermal Conductivity: ʻOi aku ka wikiwiki o ka SiC i ka wela ma mua o ka hapa nui o nā metala, i mea kūpono no nā wahi wela kiʻekiʻe.
Haʻahaʻa Thermal Expansion: Kūʻē ia i ka warping a i ʻole ka haki ʻana ma lalo o ka hoʻololi koke ʻana o ka wela (ke kūpaʻa haʻalulu maikaʻi loa).
ʻAʻole inertness: He kūpaʻa loa ia i ka corrosion mai nā ʻakika, alkalis, a me nā paʻakai hoʻoheheʻe ʻia, ʻoiai ma nā mahana kiʻekiʻe.
Nā Pono Semiconducting: ʻAʻole like me nā abrasives ʻē aʻe, ʻo SiC kahi semiconductor ākea-bandgap, e hoʻololi nei i ka ʻoihana uila mana.
Ke Kaʻina Hana Hana: ʻO ke ʻano Acheson a ma waho
ʻO ka hanaʻana o ka maʻemaʻe kiʻekiʻe
ka pauda kalapona silikahe kaʻina hana nui a me ka ikehu.
Ke Kaʻina Acheson
Hana ʻia e Edward Goodrich Acheson i ka makahiki 1891, ʻo ia ke ʻano kumu mua no ka hana nui.
Mea Maka: Hoʻohui ʻia ke one silica maʻemaʻe kiʻekiʻe (SiO2) a me ka petroleum coke (C). I kekahi mau hihia, hoʻohui ʻia ka sawdust a me ka paʻakai e kāohi i ka porosity a wehe i nā haumia.
Ka Uhi Uila: Hoʻokomo ʻia ka hui ʻana i loko o kahi umu kūʻē. Hoʻokomo ʻia ke au uila ma o ka graphite core, e hoʻomehana ana i ka hui ʻana a puni i nā mahana ma waena o 1,700°C a me 2,500°C.
Pane Kemika: Ua hiki mai ka hopena SiO2 + 3C → SiC + 2CO.
'Ohi: I ka manawa e ma'alili ai ka umu, ua ho'okumu 'ia ka nui "cylindrical" o nā kristal SiC. Loaʻa i ke kumu ka maʻemaʻe kiʻekiʻe loa (Green SiC), aʻo nā papa o waho e hāʻawi i ka Black SiC.
Ka hana ʻana i loko o ka pauda
Ke hōʻiliʻili ʻia nā crystals crude, e hana lākou i nā ʻano hana he nui:
Ka ʻohi ʻana a me ka Milling: Ke hoʻohana ʻana i nā mea wili ʻāwae, nā wili hāmare, a i ʻole nā wili pōleʻa e hoʻemi i nā kristal i ka pauka.
Ka helu ʻana (Sizing): Ke hoʻohana nei i nā pale vibrating a i ʻole nā mea hoʻohālikelike ea e hōʻoia i ka hui ʻana o ka pauka i nā nui grit kikoʻī (e laʻa, FEPA, JIS, a i ʻole nā kūlana ANSI).
ʻO ka holoi ʻana a me ka hoʻomaʻemaʻe: No ka wehe ʻana i ke koena hao, silicon manuahi, a i ʻole kalapona, mālama pinepine ʻia ka pauka me nā kemika e hiki ai i nā pae maʻemaʻe o 98% a 99.9%.
ʻEleʻele vs. Green Silicon Carbide: Hoʻomaopopo i ka ʻokoʻa
I ka mākeke honua, ua hoʻokaʻawale ʻia ka pauka SiC e kona kala, e hōʻike ana i kona maʻemaʻe a me ka hoʻohana ʻana.
ʻEleʻele Silicon Carbide (ʻeleʻele SiC)
Loaʻa iā Black SiC ma kahi o 95% a 98% SiC. ʻO kona waihoʻoluʻu ʻeleʻele ma muli o ka nui o ka hao a me ka haumia kalapona.
Nā ʻano: ʻoi aku ka ʻoi aku o ka paʻakikī akā ʻoi aku ka palupalu ma mua o ka SiC ʻōmaʻomaʻo.
ʻOi loa no: ʻO ka wili ʻana i nā mea ikaika kiʻekiʻe e like me ka hao hoʻolei, nā metala non-ferrous (keleawe, aluminika), a me nā mea metala ʻole (pōhaku, pulu, lāʻau). ʻO ia hoʻi ke koho mua no ka deoxidization metallurgical.
ʻOmaomao Silicon Carbide (Green SiC)
ʻO Green SiC ka ʻano hoʻomaʻemaʻe kiʻekiʻe, ʻoi aku ma mua o 99% SiC maʻiʻo.
Nā hiʻohiʻona: ʻoi aku ka paʻakikī a me ka mana ʻoki ʻoi aku i hoʻohālikelike ʻia me ka SiC ʻeleʻele.
ʻOi aku ka maikaʻi no: ʻO ka wili pololei ʻana i nā mea paʻakikī a palupalu e like me ka tungsten carbide, aniani aniani, seramika, a me nā wafers semiconductor.
Na Hana Hana Nui
Metallurgy and Steelmaking
I ka ʻoihana metallurgical, lawelawe ʻo SiC pauka ma ke ʻano he deoxidizer ikaika a me kahi kumu wahie i loko o nā kīʻaha a me nā kapuahi uila.
Pōmaikaʻi: Hoʻomaikaʻi ia i ka wai o ka metala i hoʻoheheʻe ʻia, hoʻonui i ka nui o ka hoʻihoʻi ʻana o ke kalapona a me ke kalapona, a hoʻemi i ka pau ʻana o ka ikehu o ke kaʻina hoʻoheheʻe.
Cast Iron Production: Hoʻolaha ia i ka hoʻokumu ʻana o nā graphite flakes, e alakaʻi ana i ka hoʻoheheʻe ʻana i ka hao hina a me ka ductile kiʻekiʻe.
Abrasive a me ka hoʻopau ʻili
ʻO kēia paha ka hoʻohana maʻamau o ka pauka SiC.
Bonded Abrasives: Hoʻohana ʻia no ka hana ʻana i nā huila wili a me nā disc.
Coated Abrasives: Hoʻohana ʻia i nā pepa one a me nā kāʻei polishing.
Lapping & Polishing: Hoʻohana ʻia nā pauka SiC maikaʻi i loko o nā "slurries" no ka hoʻopaʻa pololei ʻana i nā kīwaha, nā mīkini, a me nā substrate semiconductor.
ʻO Refractory a me Keramika
Ma muli o kona wahi hoʻoheheʻe kiʻekiʻe (ua hoʻohaʻahaʻa ia ma kahi o 2,700 ° C) a me ka hoʻonui haʻahaʻa haʻahaʻa, ʻo SiC kahi mea refractory mua.
Nā Lako Kiln: Hoʻohana ʻia nā pā a me nā kaola SiC i nā kiln seramika no ka mea ʻaʻole lākou e hoʻoheheʻe ma lalo o nā haʻahaʻa kaumaha i nā wela wela.
ʻO nā ʻenehana ʻenehana: Hoʻohana ʻia i nā ʻaʻahu pale pale, nā apo sila no nā pamu, a me nā disc brake automotive.
ʻElepona Kiʻekiʻe (The SiC Revolution)
Ua ʻike ka 21st century i ka piʻi ʻana o ka noi SiC no ka ʻoihana semiconductor.
Nā Mana Mana: ʻOi aku ka maikaʻi o nā MOSFET a me nā diodes i hoʻokumu ʻia ma SiC ma mua o nā ʻāpana silika kahiko.
5G Infrastructure: Hoʻohana ʻo SiC ma ke ʻano he substrate no Gallium Nitride(GaN) ma nā polokalamu SiC, kahi e mana ai i nā kahua kumu 5G kiʻekiʻe.
Nā Kūlana Kūlana o ka honua no ka SiC Powder
I ka wā e loaʻa ai
SiC paudama ke ao holoʻokoʻa, pono nā mea kūʻai aku e hoʻokele i nā ʻōnaehana helu like ʻole:
FEPA (Federation of European Producers of Abrasives): Hoʻohana i nā prefixes "F" (no nā mea abrasive i hoʻopaʻa ʻia) a me "P" (no nā abrasive i uhi ʻia) (e laʻa, F240, P1200).
ʻO JIS(Keʻena Hana Hana Kepani): Maʻa mau i nā mākeke ʻĀsia (e laʻa, #3000).
ANSI (American National Standards Institute): Hoʻonohonoho ʻia no ka mākeke ʻAmelika ʻĀkau.
Pono nā pae maʻemaʻe:
Ka Papa Metallurgical:88% -95%SiC.
Papa Abrasive:96% -98.5%SiC.
Maʻemaʻe Kiʻekiʻe/Papa Seramika:99%SiC.
ʻOi aku ka nui o ka pauka Silicon carbide ma mua o kahi mea abrasive maʻalahi.
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