Yiziphi izakhiwo ze-silicon carbide?
1. Ukwethembeka okuhle.
Ukubilisa nge-sulfuric acid, i-hydrochloric acid ne-hydrofluoric acid akulula ukuqoshwa. I-SiC ayiphenduli nge-magnesium chloride ekushiseni okuphezulu, ngakho inokumelana okuhle nezinsalela ze-asidi. Ukusabela phakathi kwe-SIC kanye ne-lime powder kancane kancane kuthuthuka ku-525 futhi kuba sobala cishe ngo-1000, kuyilapho ukusabela phakathi kwe-SIC ne-copper oxide kukhula ngokusobala ku-800. Ku-1000-1200 kwakuboniswa nge-iron oxide, futhi ku-1300 yayiqhekeke kakhulu. Ukusabela nge-chromium oxide kancane kancane kwashintsha kusuka ku-1360 degrees kuya ekuphenduleni kokuqhekeka. Ku-hydrogen, i-silicon carbide esuka ku-600 kancane kancane ibonakala nayo, ku-1200 iguqulelwe ku-silicon tetrachloride ne-carbon tetrachloride. I-alkali encibilikisiwe ingancibilikisa i-SiC lapho ishisa kakhulu.
2. Ukumelana ne-oxidation
I-silicon carbide inokumelana okuhle kwe-oxidation ekamelweni lokushisa, futhi i-silicon eyinsalela, i-carbon ne-iron oxide inomphumela ezingeni le-oxidation yomoya ye-silicon carbide. I-silicon carbide ehlanzekile ingasetshenziswa ngokuphephile emoyeni oxidation womoya ongu-1500, futhi i-silicon carbide enensalela ethile izokwenziwa i-oxidized ngo-1220.
3, ukumelana nokushaqeka okuhle okushisayo.
I-silicon carbide porcelain ngoba ekushiseni okuphezulu okuqhubekayo ayincibiliki futhi incibilikise isitimu, inokumelana nokushaqeka okungcono kakhulu kwe-thermal, futhi inokuqhuba okushisayo okuphezulu kanye nokudubula okuphansi.