Ziziphi iimpawu ze-silicon carbide?
1. Ukuthembeka okulungileyo.
Ukubilisa kwi-asidi ye-sulfuric, i-hydrochloric acid kunye ne-hydrofluoric acid akulula ukuba ifakwe. I-SiC ayifuni nge-magnesium chloride kwiqondo lokushisa eliphezulu, ngoko inokumelana kakuhle ne-asidi eseleyo. I-reaction phakathi kwe-SIC kunye ne-lime powder ikhula ngokuthe ngcembe kwi-525 kwaye ibonakala ijikeleze i-1000, ngelixa i-reaction phakathi kwe-SIC kunye ne-copper oxide ikhula ngokucacileyo kwi-800. Kwi-1000-1200 ibonakaliswe nge-iron oxide, kwaye kwi-1300 yayicandeke kakhulu. Ukusabela nge-chromium oxide ngokuthe ngcembe kwatshintsha ukusuka kwidigri ze-1360 ukuya kwisenzo sokuqhekeka. Kwi-hydrogen, i-silicon carbide esuka kwi-600 ibonakaliswe ngokuthe ngcembe nayo, kwi-1200 iguqulelwe kwi-silicon tetrachloride kunye ne-carbon tetrachloride. I-alkali enyibilikisiweyo inokunyibilikisa i-SiC kumkhuhlane ophezulu.
2. Ukumelana ne-oxidation
I-Silicon carbide inokumelana ne-oxidation efanelekileyo kwiqondo lobushushu begumbi, kwaye i-silicon eseleyo, i-carbon kunye ne-iron oxide inefuthe kumgangatho we-oxidation yomoya we-silicon carbide. I-silicon carbide ecocekileyo inokufakwa ngokukhuselekileyo kwi-air oxidation atmosphere ye-1500, kunye ne-silicon carbide enentsalela ethile iya kufakwa kwi-oxidized ngo-1220.
3, ukuxhathisa ukothuka okuhle kwe-thermal.
I-silicon carbide porcelain ngenxa yokuba kwiqondo lokushisa eliphezulu eliqhubekayo alinyibiliki kwaye linyibilikise umphunga, inokumelana nokothuka kwe-thermal, kwaye inokuqhuba okuphezulu kwe-thermal kunye nokudubula okuphantsi.